About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Low-temperature formation of CoSi 2 in the presence of Au
Abstract
The formation of cobalt silicides in the presence of interlayers and capping layers of Au, using both ex situ and in situ characterization techniques was studied. It was found that the formation temperature of CoSi 2 was significantly lowered in the presence of Au. It was shown that for thin interlayers or capping layers, Au does not significantly affect the formation of Co 2Si and CoSi, while it lowers the nucleation temperature of CoSi 2. CoSi 2 appears to form as the first place at temperatures as low as 300°C for thick interlayers.