Low temperature electrical resistance of thin film AuIn₂

Abstract

The temperature dependence of the electrical resistance of a 4.4 cm long, 2.5 μm wide and 20 nm thick AuIn2 film has been measured from 10 K to 5 mK in a 600 Oe magnetic field. Below 3 K the resistance increases with decreasing temperature and above 150 mK is in quantitative agreement with two-dimensional localization theory. However below 150 mK we observe for the first time a crossover to a more slowly increasing resistance with decreasing temperaturature that is in quantitative agreement theories based on Coulomb-interaction effects. © 1981.