Structural transformations as observed by transmission electron microscopy during electrical switching in amorphous Ge–Te

Structural transformations were induced in thin films of amorphous Ge–Te by an applied voltage while the sample was simultaneously observed by transmission electron microscopy. Low-resistance states consisting of crystalline Te were observed both in an amorphous material and in crystalline GeTe. In situ electron diffraction was used to identity the various phases. © 1973, Taylor & Francis Group, LLC. All rights reserved.