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Philosophical Magazine
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Structural transformations as observed by transmission electron microscopy during electrical switching in amorphous Ge–Te

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Abstract

Structural transformations were induced in thin films of amorphous Ge–Te by an applied voltage while the sample was simultaneously observed by transmission electron microscopy. Low-resistance states consisting of crystalline Te were observed both in an amorphous material and in crystalline GeTe. In situ electron diffraction was used to identity the various phases. © 1973, Taylor & Francis Group, LLC. All rights reserved.

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Philosophical Magazine

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