Stable SRAM cell design for the 32 nm node and beyond
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
We report the fabrication and accurate measurement of propagation and bending losses in single-mode silicon waveguides with submicron dimensions fabricated on silicon-on-insulator wafers. Owing to the small sidewall surface roughness achieved by processing on a standard 200mm CMOS fabrication line, minimal propagation losses of 3.6±0.1dB/cm for the TE polarization were measured at the telecommunications wavelength of 1.5μm. Losses per 90° bend are measured to be 0.086±0.005dB for a bending radius of 1μm and as low as 0.013±0.005dB for a bend radius of 2μm. These record low numbers can be used as a benchmark for further development of silicon microphotonic components and circuits. © 2004 Optical Society of America.
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
Yurii A. Vlasov, Martin O'Boyle, et al.
Nature
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OFC 2015
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CLEO 2010