Conference paper
Soft error rate scaling for emerging SOI technology options
P. Oldiges, K. Bernstein, et al.
VLSI Technology 2002
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
P. Oldiges, K. Bernstein, et al.
VLSI Technology 2002
J.N. Burghartz, T.O. Sedgwick, et al.
BCTM 1993
G.L. Bona, B.J. Offrein, et al.
SPIE Photonics Europe 2004
T.R. Gheewala, D. Heidel
IEEE Electron Device Letters