W. Chen, Y. Taur, et al.
VLSI Technology 1996
Paper
Ion Microbeam Radiation System
Abstract
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of diameter as small as 1 p.m onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system, and its operation, are described. Applications are described which demonstrate the capabilities of the system. © 1993 IEEE
Related
Conference paper
Silicon-on-sapphire for RF Si systems 2000
I. Lagnado, P.R. De La Houssaye, et al.
SiRF 2000
F. Horst, R. Germann, et al.
IEEE Photonics Technology Letters
S.E. Schuster, W. Reohr, et al.
ISSCC 2000