Publication
Applied Physics Letters
Paper

Ion-induced fluorination in electron cyclotron resonance etching of silicon studied by x-ray photoelectron spectroscopy

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Abstract

X-ray photoelectron spectroscopy has been used to investigate the effect of varying substrate bias when silicon is etched in a CF4 electron cyclotron resonance plasma. After etching, the silicon surface is found to be covered by a two layer structure consisting of damaged, fluorinated silicon and a fluorocarbon overlayer. The thickness of the fluorinated silicon layer depends on the self-bias voltage. Reduction of the ion energy leads to a thinner fluorinated layer as well as a lower etch rate, suggesting that damage and fluorination of the crystal lattice are important in the ion enhanced etching of silicon in fluorine containing plasmas.

Date

01 Jan 1992

Publication

Applied Physics Letters

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