J.E.E. Baglin, J.C. Davis, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Paper
Ion beam annealing of semiconductors
Abstract
The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.
Related
J. Woodall, R.T. Hodgson, et al.
Applied Physics Letters
A.J. Kellock, J.E.E. Baglin
Nuclear Inst. and Methods in Physics Research, B
A.J. Kellock, J.E.E. Baglin, et al.
MRS Spring Meeting 1994