W.K. Chu, S. Mader, et al.
Nuclear Instruments and Methods
The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.
W.K. Chu, S. Mader, et al.
Nuclear Instruments and Methods
R.T. Hodgson, V.R. Deline, et al.
Applied Physics Letters
S. García-Blanco, A.J. Kellock, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
C.F. Dewey Jr., W.R. Cook Jr., et al.
Applied Physics Letters