R.T. Hodgson, R.W. Dreyfus
Physics Letters A
Paper
Ion beam annealing of semiconductors
Abstract
The first use of an intense pulsed ion beam to anneal ion-implanted semiconductors is reported. Helium ion channeling shows that a single 80-ns pulse 200-keV H+ ions at ∼100 A/cm2 produced good crystallinity in silicon implanted with 1014 As/cm2 at 100 keV.
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