Ion beam mixing of metal films on SiO₂

Abstract

Ion beam mixing of certain metals deposited on SiO2 substrates causes reactions to occur which result in the formation of metal-rich suicides in the region of the interface and an increase in the adhesion of the film to the substrate. For other metals, ion irradiation causes lateral transport and coalescence of metal atoms resulting in the formation of an island structure. The results obtained by ion irradiation are compared with previous studies of high-temperature thermal processing of metal films on SiO2. © 1984.