About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Ion backscattering and channeling study of InAs-GaSb superlattices
Abstract
We show that the Rutherford backscattering yield from [100] InAs-GaSb superlattices has a marked oscillatory structure indicative of the superlattice periodicity. Channeling measurements reveal higher dechanneling along 〈110〉 than along [100] directions, and this can be interpreted as an evidence for relaxation effects along the [100] growth direction at each InAs-GaSb interface. We attribute this to the fact that, although there is a good lattice match between InAs and GaSb, the interfaces consist of either Ga-As or In-Sb bonds, which differ by 7% in binding distance from InAs-GaSb.