C.A. Chang, L.L. Chang, et al.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
We show that the Rutherford backscattering yield from [100] InAs-GaSb superlattices has a marked oscillatory structure indicative of the superlattice periodicity. Channeling measurements reveal higher dechanneling along 〈110〉 than along [100] directions, and this can be interpreted as an evidence for relaxation effects along the [100] growth direction at each InAs-GaSb interface. We attribute this to the fact that, although there is a good lattice match between InAs and GaSb, the interfaces consist of either Ga-As or In-Sb bonds, which differ by 7% in binding distance from InAs-GaSb.
C.A. Chang, L.L. Chang, et al.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
S.S. Lau, W.K. Chu, et al.
Thin Solid Films
W.K. Chu, S. Mader, et al.
Nuclear Instruments and Methods
W.K. Chu, B.L. Crowder, et al.
Applied Physics Letters