Publication
Applied Physics Letters
Paper

Ion backscattering and channeling study of InAs-GaSb superlattices

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Abstract

We show that the Rutherford backscattering yield from [100] InAs-GaSb superlattices has a marked oscillatory structure indicative of the superlattice periodicity. Channeling measurements reveal higher dechanneling along 〈110〉 than along [100] directions, and this can be interpreted as an evidence for relaxation effects along the [100] growth direction at each InAs-GaSb interface. We attribute this to the fact that, although there is a good lattice match between InAs and GaSb, the interfaces consist of either Ga-As or In-Sb bonds, which differ by 7% in binding distance from InAs-GaSb.

Date

23 Jul 2008

Publication

Applied Physics Letters

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