About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Electronic Materials
Paper
Investigations of strength of copper-bonded wafers with several quantitative and qualitative tests
Abstract
The strengths of Cu-bonded wafers with respect to different bonding temperatures and bonding durations by quantitative and qualitative approaches were reviewed and investigated. These investigations include the mechanical dicing test, the tape test, the pull test, and the push test. For all test results, the strength of Cu-bonded wafers increases with increases in bonding duration or bonding temperature. Thermal anneal after bonding improved the bonding strength only at the high bonding temperature and not at the low temperature.