Publication
Applied Physics Letters
Paper

Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon

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Abstract

Arsenic dopant profile motion in ion implanted Si samples annealed for a few seconds at 1100°C is adequately described by a model involving concentration enhanced diffusion. There is no evidence of an initial rapid diffusive transient. Diffusion in samples preannealed at 550°C is consistent with this result.

Date

01 Jan 1985

Publication

Applied Physics Letters

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