Single Crystal Silicon Films on Amorphous Insulators: Growth by Lateral Nucleated Epitaxy Using Scanning Laser and Electron Beams and Evaluation by Electron Backscattering Contrast

Abstract

Electron backscattering contrast has been used to study the mode and extent of single crystal silicon film growth on amorphous insulators. Using nucleated lateral epitaxy and a scanning argon ion laser beam or an electron beam, single crystal films up to 1 mm x 70 µm in area were grown over thin silicon nitride or silicon dioxide layers on silicon substrates. Elevated substrate temperatures and the use of capping layers promoted large area growths and reduced damage to the structure. Electron channeling micrographs easily reveal that after 70–100 µm of scan progression the single crystal growth of laser scanned samples terminates in either a uniformly nucleated polycrystalline growth front or in random nucleated large twins propagating along [110] direction. Electron beam produced overgrowths revealed extensive twin formation both in the nonovergrowth and overgrowth regions. © 1982, The Electrochemical Society, Inc. All rights reserved.