Publication
Solid State Communications
Paper

Investigation of possible dynamic polarization effects on the transmission probability of n-GaAs/AlxGa1-xAs/n-GaAs tunnel barriers

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Abstract

Tunneling through n-GaAs/AlxGa1-xAs/n-GaAs barriers has been systematically investigated over a wide range of barrier heights and thicknesses (up to 100 nm). This study provides experimental evidence that an electron sees a dynamically variable potential barrier as it tunnels through. The general form of this potential is inferred from the data, and its relation to the tunneling time of Büttiker and Landauer discussed. © 1988.

Date

01 Jan 1988

Publication

Solid State Communications

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