Investigation of possible dynamic polarization effects on the transmission probability of n-GaAs/Al_xGa_1-xAs/n-GaAs tunnel barriers

Tunneling through n-GaAs/AlxGa1-xAs/n-GaAs barriers has been systematically investigated over a wide range of barrier heights and thicknesses (up to 100 nm). This study provides experimental evidence that an electron sees a dynamically variable potential barrier as it tunnels through. The general form of this potential is inferred from the data, and its relation to the tunneling time of Büttiker and Landauer discussed. © 1988.