IEEE International SOI Conference 2010
Conference paper

Investigation of kink-induced excess RF channel noise in sub -50 nm PD-SOI MOSFETs

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RF noise performance of PD-SOI MOSFETs at 40 nm gate length is reported. Using drift-diffusion transport, a good match between small signal measurements and simulations is obtained in presence of velocity saturation and impact ionization. Similar to bulk, PD-SOI also exhibits excess RF channel noise. A sharp rise in the channel noise parameter γ near the kink region in the DC I-V can be explained by a rise in the body potential due to floating body effect and consequent increase of the effective drain conductance at zero drain bias. ©2010 IEEE.