Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Resolved inverse-photoemission spectroscopy is used to measure the energy dispersion E (k) of the unoccupied electronic surface-state bands of Si(111)2 × 1, Si(111)1 × 1-Ge, GaP(110), and GaAs(110). Comparison with optical transitions between occupied and empty surface states is made by measuring the bulk valence-band states in-situ with ultraviolet-photoemission spectroscopy. This procedure gives larger surface band gaps than the optical results and the discrepancy increases in going from Si(111)2 × 1 to GaAs(110). © 1989 IOP Publishing Ltd.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
A. Krol, C.J. Sher, et al.
Surface Science
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
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Macromolecules