T. Schneider, E. Stoll
Physical Review B
Sidewall tapering is often observed during plasma trench etching. In this paper, two types of trench tapering, intrinsic tapering and passivation-induced tapering, are discussed based on numerical simulations and theory of surface evolution. Intrinsic tapering occurs when the etch rate C(0) decreases rapidly as the slope angle 0 approaches that of the vertical surface (i.e., 0 = ± π/2). It is the dominant mechanism for the formation of tapered sidewalls when the sticking coefficient &is small. For a larger sticking coefficient, passivation-induced tapering becomes more dominant. Quantitative relations between etched trench profiles and some system parameters such as sticking coefficients, etch rates, and re-emission distributions are also presented. © 1994, The Electrochemical Society, Inc. All rights reserved.
T. Schneider, E. Stoll
Physical Review B
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Ellen J. Yoffa, David Adler
Physical Review B
K.N. Tu
Materials Science and Engineering: A