R. Ghez, J.S. Lew
Journal of Crystal Growth
Sidewall tapering is often observed during plasma trench etching. In this paper, two types of trench tapering, intrinsic tapering and passivation-induced tapering, are discussed based on numerical simulations and theory of surface evolution. Intrinsic tapering occurs when the etch rate C(0) decreases rapidly as the slope angle 0 approaches that of the vertical surface (i.e., 0 = ± π/2). It is the dominant mechanism for the formation of tapered sidewalls when the sticking coefficient &is small. For a larger sticking coefficient, passivation-induced tapering becomes more dominant. Quantitative relations between etched trench profiles and some system parameters such as sticking coefficients, etch rates, and re-emission distributions are also presented. © 1994, The Electrochemical Society, Inc. All rights reserved.
R. Ghez, J.S. Lew
Journal of Crystal Growth
T. Schneider, E. Stoll
Physical Review B
A. Reisman, M. Berkenblit, et al.
JES
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989