Publication
IEEE Journal of Solid-State Circuits
Paper

Internal Node Probing of a DRAM with a Low-Temperature e-Beam Tester

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Abstract

In order to measure signals on internal nodes of circuits operated at liquid-nitrogen temperature, an electron-beam (e-beam) tester has been modified to cool circuits to this temperature during test. This apparatus has made it possible to measure signals on internal nodes of a high-speed DRAM operated at low temperature. The waveforms, which could not be measured by other methods, provide the only means of determining the internal operation of the circuit. The instrument is described, and measurements of some critical DRAM signals are presented. © 1991 IEEE

Date

01 Jan 1991

Publication

IEEE Journal of Solid-State Circuits

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