M. Wittmer, C.-Y. Ting, et al.
Journal of Applied Physics
The interface states at metal-semiconductor junctions are still a matter of debate. We present a novel approach to this issue that uses state-of-the-art techniques to prepare silicon surfaces with different surface terminations and employs non-interacting Schottky contacts to measure the barrier height. We report a difference of 50 mV in barrier height for Hg Schottky diodes on Si(111) surfaces with different surface terminations. © 1993.
M. Wittmer, C.-Y. Ting, et al.
Journal of Applied Physics
R. Suryanarayanan, G. Güntherodt, et al.
Physical Review B
J. Freeouf, D.A. Buchanan, et al.
Applied Physics Letters
M. Wittmer, P. Oelhafen, et al.
Physical Review B