About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Interaction of Pd-Er alloys with silicon
Abstract
In situ resistivity measurements together with MeV 4He + backscattering, x-ray diffraction, barrier height measurements, and Auger electron spectroscopy combined with Ar sputtering have been used to investigate the interaction of silicon with alloys of rare-earth and near-noble metals with annealing at temperatures up to 650°C. Alloys of Pd-Er with three different compositions have been prepared by dual electron-gun coevaporation on both n- and p-type silicon and Pd/Er bilayers have been deposited on SiO2. The results show that as-deposited these alloys are amorphous and the initial stages of the reaction with silicon upon annealing is controlled by the metal-metal interaction as well as the metal-silicon interaction. The Er-rich alloy (Pd15Er85) segregates Er to the silicon interface and forms Pd 2Er5. The segregated Er reacts with silicon producing ErSi2. For the Pd-rich alloy (Pd65Er 35) the excess Pd is segregated at the silicon surface forming Pd2Si. The near 50-50 alloy forms PdEr and a slightly higher temperature is necessary to promote the reaction with silicon to form the silicide of the excess component.