INTERACTION BETWEEN Ti AND SiO//2.

Abstract

In the first part of the study, RBS analysis was used to examine the interaction of 100nm Ti with SiO//2 layers of 35 and 100nm thickness in the temperature range of 400 to 1000 degree C. It was observed that a limited interaction takes place at temperatures at and below 600 degree C. The amount of SiO//2 reduced by the Ti is about 10-20nm. At 700 degree C, an increased interaction starts to take place. In the second part of the study, Ti films on SiO//2 were annealed at temperatures between 500 and 800 degree C. The unreacted Ti and any metal-rich Ti-silicide was then etched away and the thickness of the remaining oxide was measured with optical interferometry.