Conducting Transition Metal Oxides: Possibilities for RuO₂in VLSI Metallization

Abstract

Ruo2belongs to the group of transition metal dioxides which crystallize in tetragonal rutile structure and have low bulk metallic resistivities ranging from 30 to 100 μΩ-cm. Because of the thermal stability and excellent diffusion barrier properties, they deserve a special notice as metallization alternatives in a variety of VLSI applications. We will discuss our recent work on characterization of reactively sputtered films of RuO2and will specifically explore correlations between oxygen-induced stress and their microstructure and diffusion barrier properties. © 1988, The Electrochemical Society, Inc. All rights reserved.