Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Ruo2belongs to the group of transition metal dioxides which crystallize in tetragonal rutile structure and have low bulk metallic resistivities ranging from 30 to 100 μΩ-cm. Because of the thermal stability and excellent diffusion barrier properties, they deserve a special notice as metallization alternatives in a variety of VLSI applications. We will discuss our recent work on characterization of reactively sputtered films of RuO2and will specifically explore correlations between oxygen-induced stress and their microstructure and diffusion barrier properties. © 1988, The Electrochemical Society, Inc. All rights reserved.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Lawrence Suchow, Norman R. Stemple
JES
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings