Integration of self assembly for semiconductor microelectronics
C.T. Black
CICC 2005
Silicon capacitors with increased charge storage capacity over planar structures were produced by combining self-organizing diblock copolymer system with semiconductor processing. Diblock copolymer thin films were used as a mask for dry etching to roughen a silicon surface. This was done on a 30 nm length scale, which was well below photolithographic resolution limits. Silicon etch depth was correlated with capacitance values using electron microscopy. This block copolymer nanotemplating process is scalable to large wafer dimensions and compatible to standard semiconductor processing techniques.
C.T. Black
CICC 2005
C.T. Black, K.W. Guarini, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
C.T. Black, C.B. Murray, et al.
Science
M. Tinkham, D.C. Ralph, et al.
Czechoslovak Journal of Physics