P.G. McMullin, J.M. Blum, et al.
IEEE JQE
Paper
Injection laser writing on chalcogenide films
Abstract
The crystallization and amorphization of Te-As-Ge films with GaAs injection lasers has been investigated. Power density measurements for crystallization and amorphization are presented, and a reversemode write-read-erase cycle is demonstrated. The results show that direct bit storage is feasible with an injection laser-chalcogenide film system. © 1974 Optical Society of America.
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