E.S. Yang, P.G. McMullin, et al.
Applied Physics Letters
Paper
Effect of doping on degradation of GaAsSingle Bond signAlx Ga1-xAs injection lasers
Abstract
The influence of the active layer dopant on the degradation of GaAsSingle Bond signAlx Ga1-xAs double-heterostructure lasers has been studied using pulsed excitation. Compensated p -type dopants give the slowest degradation, while n -type dopants give the most rapid. These results can be understood on the basis of arsenic vacancy migration and the formation of arsenic vacancy-acceptor complexes. © 1974 American Institute of Physics.
Related
K.K. Shih, J.M. Blum
JES
M.B. Small, J.M. Blum, et al.
Applied Physics Letters
P.G. McMullin, J.M. Blum, et al.
IEEE JQE