Endurance improvement of Ge2Sb2Te5-based phase change memory
Chieh-Fang Chen, A.G. Schrott, et al.
IMW 2009
The interaction of SiO2 surfaces with ultrathin layers of 4-16 Å of Cr evaporated in ultrahigh vacuum has been studied by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. The surfaces were treated either by Ar sputtering, sputtering, and simultaneous annealing, or by annealing in O2. A room-temperature reaction occurs on sputtered samples and produces a new XPS peak at a binding energy 4.9 eV lower than that of oxidized Si 2p and a shoulder in the O 1s line. These effects are less pronounced in sputtered-annealed samples and insignificant in nonsputtered ones. Our results suggest the presence of silicon in a Cr-rich environment which is at a maximum concentration away from the SiO2-Cr interface, following a buffer region richer in oxygen.
Chieh-Fang Chen, A.G. Schrott, et al.
IMW 2009
Y.C. Chen, C.T. Rettner, et al.
IEDM 2006
B.M. Rush, G.S. Frankel, et al.
JES
E.J.M. O'Sullivan, D.W. Abraham, et al.
ECS Meeting 2003