Silicon-on-insulator dynamic threshold ESD networks and active clamp circuitry

Abstract

Electrostatic discharge (ESD) protection circuits of silicon-on-insulator (SOI) active clamp networks is discussed. Active and passive clamps limit overshoot and undershoot phenomenon for improved functional performance and ESD protection. Results revealed that lateral SOI diode structures provide very low RON resistance, reducing the peak voltage observed from the SOI active clamp network.