Publication
Journal of Applied Physics
Paper

In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4-H2 glow discharges

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Abstract

In situ Auger electron spectroscopy has been combined with in situ etch-rate measurements, using quartz crystal microbalances, to study the plasma etching of Si and SiO2 surfaces rf biased at -100 V in CF 4-H2 glow discharges. More carbon deposition was observed on the Si surface relative to the SiO2 surface as hydrogen was added to the CF4 plasma. This observation is consistent with a previously suggested model for the large SiO2-to-Si etch-rate ratios observed in CF4-H2 discharges.

Date

29 Jul 2008

Publication

Journal of Applied Physics

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