H.D. Dulman, R.H. Pantell, et al.
Physical Review B
We have investigated the in-plane transport of photoexcited carriers and excitons in Al0.3Ga0.7As/GaAs quantum well structures as a function of excitation photon energy and temperature at low carrier density (108 cm-2). We have discovered a strong correlation between the diffusivity and the excitation photon energy; the exciton diffusivity becomes quenched as the excitation photon energy decreases closer to the heavy-hole exciton state. We have also found significant enhancement of diffusivity when a light-hole exciton state is resonantly excited. We attribute the enhancement to the difference between exciton scattering and free carrier scattering. © 1993.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
T. Schneider, E. Stoll
Physical Review B
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008