About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Solid State Communications
Paper
In-plane transport of excitons in quantum well structures
Abstract
We have investigated the in-plane transport of photoexcited carriers and excitons in Al0.3Ga0.7As/GaAs quantum well structures as a function of excitation photon energy and temperature at low carrier density (108 cm-2). We have discovered a strong correlation between the diffusivity and the excitation photon energy; the exciton diffusivity becomes quenched as the excitation photon energy decreases closer to the heavy-hole exciton state. We have also found significant enhancement of diffusivity when a light-hole exciton state is resonantly excited. We attribute the enhancement to the difference between exciton scattering and free carrier scattering. © 1993.