Abstract
The effect of the pressure of the constituents of a binary compound on the segregation coefficient (ko) of a substitutional impurity is considered. The theory concerning the incorporation of an impurity is briefly reviewed, and the dependence of ko on PM is given for various combinations of electrical character of an impurity and the site the impurity occupies. The impurities In and Sb were studied in CdTe. ko(In) is inversely proportional to PCd and ko(Sb) directly proportional to Pcd. The results are in quantitative agreement with the theoretical prediction if it is assumed that native defects play a negligible role as a source of free carriers or charge compensation. The donor Te, the acceptor Zn, and the amphoteric impurity Sn were studied in InAs by pulling crystals by the Czochralski method at various arsenic pressures. The ko’s follow the predicted behavior. The practical significance of the dependence of ko on the pressure of compound constituents in relation to materials preparation is discussed briefly. © 1966, The Electrochemical Society, Inc. All rights reserved.