Qiqing Ouyang, Xiangdong Chen, et al.
IEEE Transactions on Electron Devices
Graded doping profile in the channel of vertical sub-100-nm nMOSFETs was investigated in this study. Conventional single-step ion implantation was used to form the asymmetric graded doping profile in the channel. No large-angle-tilt implant is needed. The device processing is compatible with conventional CMOS technology. In a graded-channel-doping device, with the higher doping near the source, drain induced barrier lowering (DIBL) and the off-state leakage current are reduced significantly. The graded doped channel also has a lower longitudinal electric field near the drain. Therefore, hot-carrier related reliability is improved substantially with this type of device structure.
Qiqing Ouyang, Xiangdong Chen, et al.
IEEE Transactions on Electron Devices
Xiangdong Chen, Qiqing Ouyang, et al.
Applied Physics Letters
Qiqing Christine Ouyang, S.J. Koester, et al.
SISPAD 2002