Imaging of oxide and interface charges in SiO2-Si
R. Ludeke, E. Cartier
Microelectronic Engineering
The electron dynamics for electron energies up to 5 eV has been studied by soft x-ray photoemission spectroscopy. Monte Carlo simulations have been performed to derive the energy dependence of the pair-production rate using these results in combination with published data on the ionization coefficient and on the quantum yield for pair production. The obtained ionization rate shows a very soft threshold at 1.2 eV, approaching the results by Kane [Phys. Rev. 159, 624 (1967)] at higher energies. Several published models have been found to be inconsistent with the full set of experimental data we have considered.
R. Ludeke, E. Cartier
Microelectronic Engineering
M.V. Fischetti
Journal of Applied Physics
M.V. Fischetti, S.E. Laux
Journal of Applied Physics
M.V. Fischetti
VLSI Design