DATE 2014
Conference paper

III-V semiconductor nanowires for future devices

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The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high Ion with high Ion/Ioff ratio. © 2014 EDAA.