PaperCMOS and memories: From 100 nm to 10 nm!Sandip Tiwari, Paul M. Solomon, et al.Microelectronic Engineering
PaperIVA-5 Refractory p-Ohmic-Contact to GaAs and GaxAl1 - xAs (x ∼ 0.3) Based on Diffusion of Zn in a Rapid Thermal FurnaceSandip Tiwari, Jeffrey Hintzman, et al.IEEE T-ED
PaperUnpinned GaAs MOS Capacitors and TransistorsSandip Tiwari, Steven L. Wright, et al.IEEE Electron Device Letters
Conference paperLateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltagesSandip Tiwari, Jeremy Burroughes, et al.IEDM 1991
