Identification of electron traps in thermal silicon dioxide films

Abstract

The infrared absorption of thermal SiO2 has been measured using the attenuated total reflectance technique. The samples were subjected to various water diffusion and annealing treatments. Electron trapping was also measured in similar samples. The infrared measurements show the presence of SiH, SiOH, and H2O groups in the SiO2 films, particularly after H2O diffusion. Examination of both the infrared absorption results and the electron trapping results show that the electron trap with a cross section of 1×10-17 cm2 is associated with SiOH groups, and that the electron trap with a cross section of 2×10 -18 cm2 is associated with H2O.