J.E. Ortega, F.J. Himpsel, et al.
Physical Review B
We demonstrate that the ability of GaN-based light-emitting diodes to emit in the short-wavelength regime makes possible "hybrid" organic-inorganic semiconductor light-emitting diodes that consist of two parts: a GaN-based electroluminescent part and an organic thin-film-based fluorescent part that absorbs the electroluminescence and fluoresces at a longer wavelength resulting in color conversion. We also show that organic films with much improved surface smoothness may be obtained by deposition at reduced temperatures. © 1997 American Institute of Physics.
J.E. Ortega, F.J. Himpsel, et al.
Physical Review B
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