E.J. Preisler, S. Guha
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Microstructural evaluation of thick (In,Mn)As epitaxial films grown by molecular-beam epitaxy on InAs/GaAs(100) substrates is carried out by transmission electron microscopy (TEM). Films grown at the substrate temperature of Ts=300 °C show the inclusion of MnAs crystallites in the zinc-blende host matrix, in which two types of crystallite morphologies, rod and approximately round shapes, are identified. In contrast, the MnAs crystallites are not observed in films grown at Ts=200 °C, and TEM studies confirm that the films are primarily of zinc-blende structure. Microstructural defects in the films are also discussed to assess the quality of epitaxy.
E.J. Preisler, S. Guha
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
N.A. Bojarczuk, M. Copel, et al.
Applied Physics Letters
L.Å. Ragnarsson, S. Guha, et al.
IEEE Electron Device Letters
E. Gusev, D.A. Buchanan, et al.
Technical Digest - International Electron Devices Meeting