I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Hot electron transport in silicon dioxide is examined with emphasis on current experimental and theoretical results. For oxide layers thicker than 100 Å, steady-state transport has been shown to control the carrier flow at all fields studied. The transition from a nearly thermal electron distribution at electric fields less than approximately 1.5 MV/cm to significantly hot distributions with average energies between 2 and 6 eV at higher fields of up to 16 MV/cm is discussed. The significance of nonpolar phonon scattering in controlling the dispersive transport at higher electric fields, thereby preventing runaway and avalanche breakdown, is reviewed. The transition from ballistic to steady-state transport on very thin oxides layers of less than 100 Å in thickness and the observation of single phonon scattering events are also discussed. © 1987.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Hiroshi Ito, Reinhold Schwalm
JES
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Shiyi Chen, Daniel Martínez, et al.
Physics of Fluids