R.M. Tromp
Physical Review B
We have developed an electron lithography method, hot electron emission lithography, which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design and fabrication of the patterned electron emitting mask made by standard metal-oxide-semiconductor technology will be discussed, and its applicability in a simple 1:1 e-beam stepper will be demonstrated. Patterns with a minimum feature size of 160 nm have been printed successfully. Further improvements in resolution to 50 nm appear to be possible. © 1998 American Institute of Physics.
R.M. Tromp
Physical Review B
J.E. Demuth, R.J. Hamers, et al.
JVSTA
D.J. DiMaria, E. Cartier, et al.
Journal of Applied Physics
E. Cartier, J.H. Stathis
Applied Physics Letters