Hot-carrier charge trapping and trap generation in HfO₂ and Al₂O₃ field-effect transistors

Abstract

An experimental study of hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field effect transistors, was presented in the article. The hot carriers were generated either optically or by direct injection in the dark from a forward-biased p-n junction. The buildup of positive charge in the dielectric during stresses was indicated by the study of the time dependence of the gate current.