Hole conduction and valence-band structure of Si₃N₄ films on Si

Abstract

Transport measurements were performed on thin films of Si3N 4 deposited on Si using carrier injection from low-energy corona ions and a shallow junction detector. Large hole conduction is found for both corona polarities. Examination of the electronic structure of Si3N 4 by x-ray photoemission spectroscopy (XPS or ESCA) reveals one broad structure 10 eV wide (FWHM) at the top of the valence bands which results from the bonding of the Si 3s, Si 3p, and N 2p orbitals. This finding is consistent with the hole conduction we observe. The XPS results are compared with those from amorphous SiO2. The tops of the valence band of Si 3N4 and SiO2 are found to lie 1.5±0.2 eV and 4.5±0.2 eV, respectively, below the Fermi level of a thin overlayer of gold.