Tak H. Ning, Peter W. Cook, et al.
IEEE JSSC
Conference paper
History, present trends, and scaling of silicon bipolar technology
Abstract
Recent advances in bipolar technology are reviewed. The Key features of the advanced bipolar devices are identified and the trends for future developmemt discussed. The scaling of high-speed circuits and the properties of the scaled devices are also reviewed.
Related
Denny D. Tang, Tze-Chiang Chen, et al.
IEEE Electron Device Letters
Tze-Chiang Chen, Kai-Yap Toh, et al.
IEEE Electron Device Letters
Tak H. Ning
IBM J. Res. Dev