Publication
IEEE Electron Device Letters
Paper

High Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level

View publication

Abstract

Transport properties have been investigated in self-aligned NMOS devices with gate lengths down to 0.07 μm. Velocity overshoot was observed in the form of the highest transconductances measured to date in Si FET's, as well as in the trend of the transconductance with gate length. The measured transconductance reached 910 μSμm at liquid-nitrogen temperature and 590 μm at room temperature. Velocity overshoot, by making such transconductances possible, should extend the value of miniaturization to dimensions that are smaller than what was commonly assumed to be worthwhile to pursue. © 1988 IEEE.

Date

01 Jan 1988

Publication

IEEE Electron Device Letters

Authors

Share