M. Richter, Emanuele Uccelli, et al.
Journal of Crystal Growth
The monolithic integration of power-efficient optoelectronic devices with CMOS circuits is critical for future on-chip optical communication. In such platforms, ultra-high-speed photodetectors operating at datacom wavelengths are essential to convert optical signals in the electrical domain. Here, we demonstrate ultra-compact high-speed III-V/Si photodetectors integrated on silicon photonics and exclusively fabricated with processes and materials compatible with CMOS foundries. The sub-femtofarad capacitance, high responsivity photodetectors demonstrate a bandwidth around 65 GHz and data reception at 100 GBd OOK. Their thickness and efficiency enable an integration in the back-end-of-line without using an amplifier, further reducing the power consumption of the link.
M. Richter, Emanuele Uccelli, et al.
Journal of Crystal Growth
Stefan Abel, Thilo Stöferle, et al.
ECOC 2015
Preksha Tiwari, Svenja Mauthe, et al.
SPIE Photonics Europe 2020
Lukas Czornomaz, V. Djara, et al.
VLSI Technology 2016