Conference paperMaterials and process integration issues in metal gate/high-k stacks and their dependence on device performanceA.C. Callegari, K. Babich, et al.ECS Meeting 2007
PaperEffect of arsenic segregation on the electrical properties of grain boundaries in polycrystalline siliconC.Y. Wong, C.R.M. Grovenor, et al.Journal of Applied Physics
PaperExamination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layersS. Guha, V.K. Paruchuri, et al.Applied Physics Letters
