True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Highly uniform step and termination structures on 4H- and 6H-SiC(0001) surfaces have been prepared via moderate annealing in disilane. Atomic force microscopy and dark-field low-energy electron microscopy imaging indicate single-phase terminations separated solely by half-unit-cell-height steps, driven by stacking fault energy. The atomic structure of 4H-SiC(0001)-√3 × √3R30°-Si has been determined quantitatively by nanospot low-energy electron diffraction. The topmost stacking fault at the 4H surface has been found to be between the second and third bilayers. © 2011 by International Business Machines Corporation.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Israel Cidon, Leonidas Georgiadis, et al.
IEEE/ACM Transactions on Networking
Sonia Cafieri, Jon Lee, et al.
Journal of Global Optimization
Yun Mao, Hani Jamjoom, et al.
CoNEXT 2006