An InGaAs-on-Si MOSFET technology platform using a CMOS-compatible fabrication flow is demonstrated. Several channel heterostructure designs are explored, with the use of thin InP barrier layers resulting in significant enhancement of mobility. MOSFETs with ft/fmax of ~350/350 GHz are demonstrated. Within the same technology platform, logic FinFET devices are also demonstrated, with record-high on-currents of 350 μA/μm. The use of S/D spacers to mitigate the parasitic bipolar effect is also explored, leading to significant reduction of off-state leakage currents. Finally, 3D sequential integration of InGaAs MOSFETs on SOI CMOS wafers is reported, showing no degradation of CMOS performance post top-level fabrication. The results indicate the strong potential for integrated InGaAs FETs towards high-performance logic and mixed-signal applications.