High-NA EUV Exposure Tool Implications to Chip and Mask Layouts

Abstract

High-NA EUV exposure tool implications: The anamorphic nature of the high NA EUV (4x magnification in X and 8x magnification in Y) results in a field size exactly half that on current EUV and optical tools. When using high-NA tools in a semiconductor build that will also use full field tools, there are overlay implications and chip and mask layout issues that need to be optimized.