Publication
IRPS 2010
Conference paper

High-K gate stack breakdown statistics modeled by correlated interfacial layer and high-k breakdown path

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Abstract

We show that a model in which the breakdown of the interfacial layer induces a correlated breakdown in the high-K, at the same location, provides a good model of the high-K/IL gate stack statistics. We discuss of the implication of this model on the lifetime projection. © 2010 IEEE.

Date

20 Oct 2010

Publication

IRPS 2010