About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Electronics Letters
Paper
High-fT n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
Abstract
The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg = 0.2μm and drain-source separation Lds = 0.9μm displayed unity current gain cutoff frequencies as high as fT = 45GHz (47GHz) at V2 = +0.6V (+1.5V). Similar devices with Lg = 0.2μm and Lds = 0.5μm produced values of fT= 61 GHz (62GHz) at Vds = +0.6V (+1.0V). The value fT = 62GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET. © IEE 1999.