M.A. Lutz, R.M. Feenstra, et al.
Surface Science
The authors present high-frequency results of n-channel MODFETs fabricated on high-mobility Si/SiGe strained layer heterostructures grown by ultrahigh vacuum chemical vapour deposition (UHV-CVD). Devices with gate length Lg = 0.2μm and drain-source separation Lds = 0.9μm displayed unity current gain cutoff frequencies as high as fT = 45GHz (47GHz) at V2 = +0.6V (+1.5V). Similar devices with Lg = 0.2μm and Lds = 0.5μm produced values of fT= 61 GHz (62GHz) at Vds = +0.6V (+1.0V). The value fT = 62GHz is the highest unity current gain cutoff frequency reported to date for an n-channel strained Si MODFET. © IEE 1999.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
S.J. Koester, J. Schaub, et al.
DRC 2004
T.N. Jackson, S. Nelson, et al.
IEEE Transactions on Electron Devices
S.J. Koester, J.O. Chu, et al.
MRS Proceedings 2004