High-density reduced-stack logic circuit techniques using independent-gate controlled double-gate devices

Abstract

Novel high-density logic-circuit techniques employing independent-gate controlled double-gate (DG) devices are proposed. The scheme utilizes the threshold-voltage (VT) difference between double-gated and single-gated modes in a high-VT DG device to reduce the number of transistors required to implement the stack logic. In a series-connected stack portion of the logic gate, the number of transistors is halved, thus substantially improving the area/capacitance and the circuit performance. The scheme can be easily implemented by a DG technology with either a metal gate or a polysilicon gate. Six-way logic can be implemented with the proposed scheme using only six transistors. The viability and performance advantage of the scheme are validated via extensive mixed-mode physics-based numerical simulations. © 2006 IEEE.